Electron beam depicting pattern design, photomask, methods of depicting and fabricating photomask, and method of fabricating semiconductor device using the same

A method of fabricating a photomask, comprising:

• preparing a photomask substrate;
• forming an opaque layer on the photomask substrate;
• forming an electron beam (e-beam) resist on the opaque layer;
• depicting the e-beam resist using e-beams;
• and
• forming an e-beam resist pattern,
• wherein depicting the e-beam resist using the e-beams includes depicting an e-beam depiction region using the e-beams without depicting an e-beam non-depiction region using the e-beams, the e-beam non-depiction region being disposed in enclosed by the e-beam depiction region, and
• the e-beam resist depicted using the e-beams includes an open region in the e-beam resist pattern that exposes the opaque layer, and a non-open region covering the opaque layer, the open region being formed by removing the e-beam depiction region and by removing substantially an entirety of the e-beam non-depiction region.

A method of fabricating a semiconductor device using a method of depicting a photomask using electron beams (e-beams), comprising:

• preparing the photomask;
• forming a material layer on a wafer;
• forming a photoresist on the material layer;
• irradiating the photoresist with light using the photomask;
• developing the irradiated photoresist to form a photoresist pattern;
• etching the material layer using the photoresist pattern as an etch mask to form a material layer pattern;
• and
• removing the photoresist pattern, wherein:
• the photomask includes a depiction region in which e-beams that are configured to depict an e-beam resist pattern are irradiated, and a non-depiction region disposed-in enclosed by the depiction region and in which the e-beams that are configured to depict the e-beam resist pattern are not irradiated, and
• forming the photoresist pattern includes forming an open region through which the material layer is etched by removing the depiction region and by removing substantially an entirety of the non-depiction region.