Modern hydride vapor-phase epitaxy system and methods

A hydride vapor-phase deposition system comprising:

• a growth chamber containing a susceptor;
• a reactant source chamber;
• a hydride reactant gas source connected to the growth chamber;
• a diffuser plate configured to separate a flow of reactant gas species from the hydride reactant gas source from one or more other reactant gas species and further configured to provide a desired gas flow distribution toward the susceptor;
• and
• a load-lock loading system attached to the growth chamber that isolates the environment of the growth chamber from the external environment while allowing the passing-through of substrate materials.

A deposition method comprising:

• a. creating a first reactant gas (R(M)) in a reactant source chamber through a chemical reaction between a solid or liquid precursor M and a different precursor gas (PG(M)), wherein the reactant source chamber operates at a temperature T(M) which is significantly above room temperature, and where the first reactant gas R(M) is chemically unstable at or near room temperature;
• b. delivering the first reactant gas to a growth chamber coupled to the reactant source chamber, wherein the growth chamber contains a susceptor;
• c. maintaining a substrate on the susceptor at or near a susceptor temperature T(S);
• d. operating walls of the growth chamber at a temperature T(C) such that T(M), T(S) are always greater than T(C).