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AssigneeSamsung Electronics Co., Ltd.
InventorsChan-hee Jeon, Han-gu Kim, Min-sun Hong, Tae-hoon Ha, Doo-hyung Kim, Jung-soon Lee
Estimating the term…
The pad interface circuit includes a first stack MOS transistor having a first terminal connected to a pad and a bulk connected to a first supply voltage; a second stack MOS transistor having a first terminal connected to a second terminal of the first stack MOS transistor and a second terminal, a gate terminal, and a bulk that are connected to the first supply voltage; and a voltage level sensing circuit generating a feedback voltage by using a pad voltage applied from the pad. In addition, the feedback voltage is applied to a gate terminal of the first stack MOS transistor.
A pad interface circuit comprising:
A method of improving reliability of a pad interface circuit, the pad interface circuit including a first stack MOS transistor having a first terminal connected to a pad and a bulk connected to a first supply voltage, and a second stack MOS transistor having a first terminal connected to a second terminal of the first stack MOS transistor and a second terminal, a gate terminal, and a bulk that are connected to the first supply voltage, the method comprising:
An integrated circuit, comprising:
Dependencies are inferred from the claim text.