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US 8,274,132 B2Granted
Electrical device and fabrication method
AssigneeInfineon Technologies AG
InventorsChristian Russ, Gunther Lehmann, Franz Ungar
Life of this patent
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Abstract
An electrical device with a fin structure, a first section of the fin structure having a first width and a first height, a second section of the fin structure having a second width and a second height, wherein the first width is smaller than the second width and the first height is lower than the second height.
Claims12
An electrical device, comprising:
- a fin structure comprising a first section and a second section, wherein the fin structure comprises
- a fin core structure, and
- an epitaxial layer grown selectively on the fin core structure in the second section of the fin structure wherein the epitaxial layer differs from the fin core structure according to at least one property, the property selected from the group consisting of doping concentration, growth geometry and material composition;
- the first section comprising a first width and a first height;
- and
- the second section comprising a second width and a second height, wherein the first width is smaller than the second width and the first height is lower than the second height.
3 more elements
An electrical fuse device, comprising:
- a fin structure comprising a first fin region and a second fin region, wherein the fin structure comprises a fin core structure and an epitaxial layer grown selectively on the fin core structure in the second fin region of the fin structure wherein the epitaxial layer differs from the fin core structure according to at least one property, the property selected from the group consisting of doping concentration, growth geometry and material composition;
- and
- a fusible link region electrically connecting the first and second fin regions with each other, wherein in the fusible link region the fin structure comprises a smaller width and a lower height than in the first and second fin regions.
An electrical device, comprising:
- a fin structure comprising a first section and a second section, wherein the fin structure comprises
- a fin core structure, and
- an epitaxial layer disposed selectively on the fin core structure in the second section of the fin structure, wherein the fin core structure comprises silicon and the epitaxial layer comprises silicon-germanium;
- the first section comprising a first width and a first height;
- and
- the second section comprising a second width and a second height, wherein the first width is smaller than the second width and the first height is lower than the second height.
3 more elements
Dependencies are inferred from the claim text.