Silicon polishing compositions with high rate and low defectivity
AssigneeCabot Microelectronics Corporation
InventorsMichael White, Richard Romine, Brian Reiss, Jeffrey Gilliland, Lamon Jones
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Abstract
The invention relates to a chemical-mechanical polishing composition comprising silica, one or more organic carboxylic acids or salts thereof, one or more polysaccharides, one or more bases, optionally one or more surfactants and/or polymers, optionally one or more reducing agents, optionally one or more biocides, and water, wherein the polishing composition has an alkaline pH. The polishing composition exhibits a high removal rate and low particle defects and low haze. The invention further relates to a method of chemically-mechanically polishing a substrate using the polishing composition described herein.
Claims59
A chemical-mechanical polishing composition consisting essentially of:
- (a) silica,
- (b) one or more organic carboxylic acids, salts, or hydrates thereof selected from the group consisting of (i) dicarboxylic acids of the formula:
- wherein n is an integer of 0-8 and each of R1 and R2 is independently selected from the group consisting of hydrogen, a hydroxyl group, and C1-C6 alkyl groups, or R1 and R2 together form an oxo group, and when n is 2 or more, the bonds between the CR1R2 groups are independently selected from the group consisting of single, double, or triple bonds;
- (ii) amino acids of the formula:
- wherein each of R1, R2, R3, and R4 is independently selected from the group consisting of hydrogen, an aminoalkyl group, a carboxyalkyl group, a hydroxyalkyl group, a —(CH2)n— group, and —(CH═CH—)n group connecting either R1 or R2 with either R3 or R4, wherein n is an integer of 1-6;
- (iii) hydroxy acids of formula (1):
- wherein n is an integer of 0-8, and each of R1-R3 is independently selected from the group consisting of hydrogen, alkyl, hydroxy, and hydroxyalkyl, wherein at least one of R1-R3 is hydroxy or hydroxyalkyl, or formula (2):
- wherein n is an integer of 1-5;
- (iv) carboxy substituted pyrazine compounds;
- and (v) carboxy substituted triazole compounds,
- (c) one or more polysaccharides selected from the group consisting of a hydroxyalkylcellulose, carrageenan, and xanthan gum,
- (d) one or more bases,
- (e) optionally one or more surfactants and/or polymers,
- (f) optionally one or more reducing agents,
- (g) optionally one or more biocides, and
- (h) water,
- wherein the polishing composition has an alkaline pH.
A method of chemically-mechanically polishing a substrate comprising:
- (i) contacting a substrate with a polishing pad and a chemical-mechanical polishing composition consisting essentially of:
- (a) silica,
- (b) one or more organic carboxylic acids or salts thereof selected from the group consisting of (i) dicarboxylic acids of the formula:
- wherein n is an integer of 0-8 and each of R1 and R2 is independently selected from the group consisting of hydrogen, a hydroxyl group, and C1-C6 alkyl groups, or R1 and R2 together form an oxo group;
- and when n is 2 or more, the bonds between the CR1R2 groups are independently selected from the group consisting of single, double, or triple bonds;
- (ii) amino acids of the formula:
- wherein each of R1, R2, R3, and R4 is independently selected from the group consisting of hydrogen, an aminoalkyl group, a carboxyalkyl group, a hydroxyalkyl group, a —(CH2)n— group, a —(CH═CH—)n group connecting either R1 or R2 with either R3 or R4, wherein n is an integer of 1-6;
- (iii) hydroxy acids of the formula (1):
- wherein n is an integer of 0-8, and each of R1-R3 is independently selected from the group consisting of hydrogen, alkyl, hydroxy, and hydroxyalkyl, wherein at least one of R1-R3 is hydroxy or hydroxyalkyl, or the formula (2):
- wherein n is an integer of 1-5;
- (iv) carboxy substituted pyrazine compounds;
- and (v) carboxy substituted triazole compounds,
- (c) one or more polysaccharides selected from the group consisting of a hydroxyalkylcellulose, carrageenan, and xanthan gum,
- (d) one or more bases,
- (e) optionally one or more surfactants and/or polymers,
- (f) optionally one or more reducing agents,
- (g) optionally one or more biocides, and
- (h) water,
- wherein the polishing composition has an alkaline pH,
- (ii) moving the polishing pad relative to the substrate with the chemical-mechanical polishing composition therebetween, and
- (iii) abrading at least a portion of the substrate to polish the substrate.
Dependencies are inferred from the claim text.