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US 8,263,473 B2Granted
Method of forming semiconductor devices
AssigneeSK hynix Inc.
InventorSang Soo Lee
Life of this patent
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Abstract
A semiconductor device includes an insulating layer and an undoped polysilicon layer that are stacked over a semiconductor substrate. The semiconductor substrate is exposed by removing the portions of the undoped polysilicon layer and the insulating layer. The trenches are formed by etching the exposed semiconductor substrate. Isolation layers are formed in the trenches, and a doped polysilicon layer is formed by implanting impurities into the undoped polysilicon layer.
Claims12
A method of forming semiconductor devices, comprising:
- forming an insulating layer over a semiconductor substrate;
- forming an undoped polysilicon layer over the insulating layer;
- removing a portion from each of the undoped polysilicon layer, the insulating layer, and the semiconductor substrate so as to form a trench;
- filling the trench with an insulating substance for an isolation layer;
- performing a first annealing process so as to harden the insulating substance;
- implanting impurities into the undoped polysilicon layer so as to convert a portion of the undoped polysilicon layer into a doped polysilicon layer;
- and
- performing a second annealing process on an entire structure including the doped polysilicon layer,
- wherein temperature applied in the second annealing process is lower than temperature applied in the first annealing process.
6 more elements
Dependencies are inferred from the claim text.