Method and structures of monolithically integrated ESD suppression device

An electrostatic discharge device for an integrated circuit, the device comprising:

• a semiconductor substrate;
• a voltage discharge region overlying an inner portion of the semiconductor substrate, the voltage discharged region comprising:
• a plurality of conductive regions arranged as an array, the array being numbered from 1 through N in a first direction and the array being numbered from 1 through M in a second direction;
• a dielectric material provided spatially around each of the conductive regions to form a thickness of material having a surface region;
• an input region coupled to a first region of the plurality of conductive regions;
• an output region coupled to a second region of the plurality of conductive regions;
• an input line provided overlying a first region of the semiconductor substrate region and coupled to the input region of the plurality of conductive regions;
• and
• an output line provided overlying a second region of the semiconductor substrate region and coupled to the output region of the plurality of conductive regions.