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US 8,148,270 B2Granted
Low K dielectric surface damage control
AssigneeTaiwan Semiconductor Manufactuiring Co., Ltd.
InventorsHun-Jan Tao, Ryan Chia-Jen Chen, Mong-Song Liang
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Abstract
A method of removing a silicon nitride or a nitride-based bottom etch stop layer in a copper damascene structure by etching the bottom etch stop layer is disclosed, with the method using a high density, high radical concentration plasma containing fluorine and oxygen to minimize back sputtering of copper underlying the bottom etch stop layer and surface roughening of the low-k interlayer dielectric caused by the plasma.
Claims8
A method of etching a nitride-based bottom etch stop layer in a copper damascene structure, comprising:
- etching the nitride-based bottom etch stop layer using a high density, high radical concentration plasma containing both fluorine and oxygen, wherein the combination of fluorine and oxygen radicals to the combination of fluorine and oxygen ions ratio in the plasma is equal to or greater than about 10:1.
Dependencies are inferred from the claim text.