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US 8,148,237 B2Granted
Pressurized treatment of substrates to enhance cleaving process
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsDeepak Ramappa, Julian G. Blake
Life of this patent
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Abstract
A method of cleaving a substrate is disclosed. A species, such as hydrogen or helium, is implanted into a substrate to form a layer of microbubbles. The substrate is then annealed a pressure greater than atmosphere. This annealing may be performed in the presence of the species that was implanted. This diffuses the species into the substrate. The substrate is then cleaved along the layer of microbubbles. Other steps to form an oxide layer or to bond to a handle also may be included.
Claims17
A method of cleaving a substrate comprising:
- implanting a species into a substrate to form a layer of microbubbles;
- annealing said substrate at a temperature between 500° C. and 600° C.;
- annealing said substrate at a pressure greater than 1 atm in an environment of said species after said annealing said substrate at said temperature between 500° C. and 600° C.;
- and
- cleaving said substrate along said layer of microbubbles.
2 more elements
A method of cleaving a substrate comprising:
- implanting a first dose of a species into a substrate to form a layer of microbubbles, said species selected from the group consisting of H and He;
- annealing said substrate at a pressure greater than 1 atm in an environment of said species, said annealing diffusing said species into said substrate and forming a second dose of said species in said substrate larger than said first dose;
- and
- cleaving said substrate along said layer of microbubbles.
1 more element
Dependencies are inferred from the claim text.