Method of fabricating memory

A method of fabricating a memory, the method comprising:

• providing a substrate including a memory region and a periphery region, wherein a plurality of gates is formed on the substrate and a sidewall of each of the gates has a first spacer, wherein the gates in the memory region have a plurality of first openings therebetween;
• forming a first material layer on the substrate in the memory region, wherein the first material layer covers the gates in the memory region and fills the first openings;
• forming a barrier layer on the substrate to cover the gates in the periphery region and the first material layer in the memory region;
• forming a second material layer on the substrate in the periphery region to cover the barrier layer on the gates in the periphery region;
• removing the barrier layer covering the first material layer;
• removing the first material layer partially to form a plurality of second openings, wherein each of the second openings is disposed on a top of each of the gates in the memory region;
• forming a first pattern in each of the second openings;
• removing a remaining of the first material layer to form a plurality of contact openings in the memory region;
• and
• forming a contact plug in each of the contact openings, wherein the first patterns are disposed between the contact plugs.