US 8,043,938 B2 · Method for manufacturing SOI substrate and SOI substrate

Abstract

A method is demonstrated to form an SOI substrate having a silicon layer with reduced surface roughness in a high yield. The method includes the step of bonding a base substrate such as a glass substrate and a bond substrate such as a single crystal semiconductor substrate to each other, where a region in which bonding of the base substrate with the bond substrate cannot be performed is provided at the interface therebetween. Specifically, the method is exemplified by the combination of: irradiating the bond substrate with accelerated ions; forming an insulating layer over the bond substrate; forming a region in which bonding cannot be performed in part of the surface of the bond substrate; bonding the bond substrate and the base substrate to each other with the insulating layer therebetween; and separating the bond substrate from the base substrate, leaving a semiconductor layer over the base substrate.

Claims28

Dependent claims

A method for manufacturing a silicon-on-insulator substrate, the method comprising the steps of:

forming an embrittled region in a bond substrate;
forming an insulating layer over a surface of the bond substrate;
forming a recessed portion in the insulating layer;
bonding the bond substrate and a base substrate to each other with the insulating layer having the recessed portion interposed therebetween;
and
separating the bond substrate from the base substrate, leaving a layer between the surface of the bond substrate and the embrittled region over the base substrate.

3 more elements

Dependencies are inferred from the claim text.

Method for manufacturing SOI substrate and SOI substrate

Life of this patent

Method for manufacturing SOI substrate and SOI substrate

Life of this patent

Abstract

Claims28