Low pH mixtures for the removal of high density implanted resist
AssigneesAdvanced Technology Materials, Inc., International Business Machines Corporation
InventorsEmanuel Cooper, Julie Cissell, Renjie Zhou, Michael B. Korzenski, George G. Totir, Mahmoud Khojasteh
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Abstract
A method and low pH compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The low pH compositions include at least one mineral acid and at least one oxidizing agent. The low pH compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).
Claims26
A method of removing bulk and/or hardened photoresist material from a microelectronic device having said photoresist material thereon, said method comprising contacting the microelectronic device with a low pH composition for sufficient time and under sufficient contacting conditions to at least partially remove said photoresist material from the microelectronic device, wherein the low pH composition comprises at least one persulfate compound and at least one peroxide compound.
A method of removing bulk and/or hardened photoresist material from a microelectronic device having said photoresist material thereon, said method comprising contacting the microelectronic device with a low pH composition for sufficient time and under sufficient contacting conditions to at least partially remove said photoresist material from the microelectronic device, wherein the low pH composition comprises at least one mineral acid and at least one oxidizing agent, wherein the oxidizing agent comprises at least one iodine-containing oxidizing agent, at least one metal ion-containing oxidizing agent comprising a permanganate ion, or a combination of at least one iodine-containing oxidizing agent and at least one metal ion-containing oxidizing agent comprising a permanganate ion.
Dependencies are inferred from the claim text.