Chemical mechanical polishing composition and methods relating thereto
AssigneeRohm and Haas Electronic Materials CMP Holdings, Inc.
InventorsZhendong Liu, Yi Guo, Kancharla-Arun Kumar Reddy, Guangyun Zhang
Life of this patent
Estimating the term…
Abstract
A chemical mechanical polishing composition useful for chemical mechanical polishing of a substrate, wherein the substrate comprises a silicon oxide material and a silicon nitride material; and methods of making and using the chemical mechanical polishing composition. The chemical mechanical polishing composition comprises, as initial components: at least one of a first substance and a second substance; wherein the first substance is according to formula I wherein the second substance is according to formula II an abrasive; and water.
Claims10
A chemical mechanical polishing composition, comprising, as initial components:
- a first substance according to formula I
- wherein each of R1, R2, R3, R4, R5, R6 and R7 is a bridging group having a formula —(CH2)n—, wherein n is an integer selected from 1 to 10, and wherein, optionally, one or more of the nitrogens in the first substance can be provided in a quaternary form, where the nitrogen assumes a positive charge;
- a second substance according to formula II
- wherein each of R8, R9, R10, R11 and R12 is selected from hydrogen and an alkyl group having 1 to 6 carbon atoms, wherein, optionally, two or more of R8, R9, R10, R11 and R12 are combined into a ring structure, and wherein, optionally, one or more of the nitrogens in the second substance can be provided in a quaternary form, where the nitrogen assumes a positive charge;
- an abrasive;
- and
- water.
A method of making the chemical mechanical polishing composition, comprising:
- providing a first substance according to formula I
- wherein each of R1, R2, R3, R4, R5, R6 and R7 is a bridging group having a formula —(CH2)n—, wherein n is an integer selected from 1 to 10, and optionally, wherein one or more of the nitrogens in the first substance can be provided in a quaternary form, where the nitrogen assumes a positive charge;
- providing a second substance according to formula II
- wherein each of R8, R9, R10, R11 and R12 is selected from hydrogen and an alkyl group having 1 to 6 carbon atoms, optionally, two or more of R8, R9, R10, R11 and R12 are combined into a ring structure, and optionally, wherein one or more of the nitrogens in the second substance can be provided in a quaternary form, where the nitrogen assumes a positive charge;
- providing an abrasive;
- providing water;
- providing a pH adjusting agent;
- combining the first substance, the second substance, the abrasive and the water to form a slurry;
- and,
- adding the pH adjusting agent to the slurry to adjust the pH of the slurry to <7.
A method of chemical mechanical polishing of a substrate, comprising:
- providing a substrate, wherein the substrate comprises a silicon oxide material and a silicon nitride material;
- providing at least one of a first substance and a second substance;
- wherein the first substance is according to formula I
- wherein each of R1, R2, R3, R4, R5, R6 and R7 is a bridging group having a formula —(CH2)n—, wherein n is an integer selected from 1 to 10, and optionally, wherein one or more of the nitrogens in the first substance can be provided in a quaternary form, where the nitrogen assumes a positive charge;
- and, wherein the second substance is according to formula II
- wherein each of R8, R9, R10, R11 and R12 is selected from hydrogen and an alkyl group having 1 to 6 carbon atoms, optionally, two or more of R8, R9, R10, R11 and R12 are combined into a ring structure, and optionally, wherein one or more of the nitrogens in the second substance can be provided in a quaternary form, where the nitrogen assumes a positive charge;
- providing an abrasive;
- providing water;
- providing a pH adjusting agent;
- combining (a) at least one of the first substance and the second substance, (b) the abrasive and (c) the water to form a chemical mechanical polishing composition;
- and, adding the pH adjusting agent to adjust the pH of the chemical mechanical polishing composition to <7;
- providing a chemical mechanical polishing pad;
- creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate;
- and,
- dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate;
- wherein at least some of the silicon oxide material and the silicon nitride material are removed from the substrate.
Dependencies are inferred from the claim text.