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US 8,012,863 B2Granted
Transistors with gate stacks having metal electrodes
AssigneeInternational Business Machines Corporation
InventorsMichael Patrick Chudzik, Paul Daniel Kirsch
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Abstract
A transistor with a gate stack having a metal electrode and a method for forming the same. The method includes providing a structure which includes (a) a substrate, (b) a gate dielectric layer on the substrate, and (c) a gate layer on the gate dielectric layer. The gate layer includes an oxidized layer. The oxidized layer comprises an oxidized material. Then, the structure is exposed to a first plasma resulting in removal of oxygen atoms from molecules of the oxidized material.
Claims18
A semiconductor fabrication method, comprising:
- providing a structure which includes (a) a substrate, (b) a gate dielectric layer on the substrate, and (c) a gate layer on the gate dielectric layer, wherein the gate layer comprises an oxidized layer, and wherein the oxidized layer comprises an oxidized material;
- exposing the structure to a first plasma resulting in removal of oxygen atoms from molecules of the oxidized material;
- and
- after said exposing the structure to the first plasma is performed, forming a polysilicon layer on the oxidized layer.
1 more element
Dependencies are inferred from the claim text.