Method of patterning target layer on substrate
AssigneeMacronix International Co., Ltd.
InventorChin-Cheng Yang
Life of this patent
Estimating the term…
Abstract
A method of patterning a target layer on a substrate is described. A patterned photoresist layer is formed over the target layer, wherein the patterned photoresist layer has unexposed parts as separate islands and each unexposed part has a low proton concentration at least in its sidewalls. Acid-crosslinked polymer layers are formed only on the sidewalls of each unexposed part. A flood exposure step is performed to the substrate. A baking step is performed to the patterned photoresist layer. A development step is performed to remove the previously unexposed parts. The target layer is etched with the acid-crosslinked polymer layers as a mask.
Claims19
A method of patterning a target layer on a substrate, comprising:
- forming a patterned photoresist layer over the target layer, wherein the patterned photoresist layer has a plurality of unexposed parts as separate islands, and each of the unexposed parts has a low proton concentration at least in sidewalls thereof;
- forming acid-crosslinked polymer layers only on the sidewalls of each unexposed part;
- performing a flood exposure step to the substrate;
- performing a baking step to the patterned photoresist layer;
- performing a development step to remove the previously unexposed parts;
- and
- etching the target layer with the acid-crosslinked polymer layers as a mask.
A method of patterning a target layer on a substrate, comprising:
- forming a photoresist layer over the target layer;
- performing an exposure step to form a plurality of exposed parts and a plurality of unexposed parts in the photoresist layer;
- performing a surface treatment to the photoresist layer to remove protons in top portions of the unexposed parts;
- performing post-exposure baking (PEB) to the photoresist layer;
- performing a first development step to remove the exposed parts;
- forming acid-crosslinked polymer layers only on sidewalls of each unexposed part;
- performing a flood exposure step to the substrate;
- performing a baking step to the photoresist layer;
- performing a second development step to remove the previously unexposed parts;
- and
- etching the target layer with the acid-crosslinked polymer layers as a mask.
A method of patterning a target layer on a substrate, comprising:
- sequentially forming a photoresist layer and a photosensitive blocking layer over the target layer, wherein the blocking layer produces no photoacid in exposure;
- performing an exposure step to form a plurality of first exposed parts and first unexposed parts in the blocking layer and form a plurality of second exposed parts and second unexposed parts in the photoresist layer;
- performing post-exposure baking (PEB) to the photoresist layer;
- performing a first development step to remove the first and second exposed parts;
- forming acid-crosslinked polymer layers only on sidewalls of each of the second unexposed parts;
- performing a flood exposure step to the substrate;
- performing a baking step to the photoresist layer;
- performing a second development step to remove the first and second unexposed parts after they are exposed in the flood exposure step and baked;
- and
- etching the target layer with the acid-crosslinked polymer layers as a mask.
Dependencies are inferred from the claim text.