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US 8,008,750 B2Granted
Crack stops for semiconductor devices
AssigneeInfineon Technologies AG
InventorsErdem Kaltalioglu, Michael Beck
Life of this patent
Estimating the term…
Abstract
Crack stops for semiconductor devices, semiconductor devices, and methods of manufacturing semiconductor devices are disclosed. In one embodiment, a barrier structure for a semiconductor device includes a plurality of substantially V-shaped regions. Each of the plurality of substantially V-shaped regions is disposed adjacent another of the plurality of substantially V-shaped regions.
Claims27
A barrier structure for a semiconductor device, comprising:
- a plurality of substantially V-shaped regions, the plurality of substantially V-shaped regions being oriented parallel to a horizontal plane, each of the plurality of substantially V-shaped regions being disposed adjacent another of the plurality of substantially V-shaped regions, wherein the barrier structure comprises a first continuous line of the plurality of substantially V-shaped regions and a second continuous line of the plurality of substantially V-shaped regions proximate the first continuous line of the plurality of substantially V-shaped regions, wherein the first continuous lines have a first height along a vertical direction, wherein the second continuous lines have a second height along the vertical direction, and wherein the first and the second continuous lines are laterally separated in a top view of the semiconductor device.
A semiconductor device, comprising:
- an integrated circuit;
- and
- a barrier structure disposed on the integrated circuit, the barrier structure comprising a plurality of substantially V-shaped regions, the plurality of substantially V-shaped regions being oriented parallel to a horizontal plane, each of the plurality of substantially V-shaped regions being disposed adjacent another of the plurality of substantially V-shaped regions, wherein the barrier structure comprises a first continuous line of the plurality of substantially V-shaped regions and a second continuous line of the plurality of substantially V-shaped regions proximate the first continuous line of the plurality of substantially V-shaped regions, wherein the first continuous lines have a first height along a vertical direction, wherein the second continuous lines have a second height along the vertical direction, and wherein the first and the second continuous lines are laterally separated in a top view of the semiconductor device.
A semiconductor device comprising:
- a first W-shaped region disposed within a barrier structure around an integrated circuit, the first W-shaped region comprising
- a first substantially V-shaped region having a first side and a second side, and
- a second substantially V-shaped region having a first side and a second side, the second substantially V-shaped region disposed adjacent the first substantially V-shaped region, wherein the second side of the first substantially V-shaped region intersects with the first side of the second substantially V-shaped region at a first intersection point, and wherein the first intersection point is at about a center of the second side of the first substantially V-shaped region.
Dependencies are inferred from the claim text.