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US 7,986,502 B2Granted
High trigger current silicon controlled rectifier
AssigneeSofics BVBA
InventorBart Sorgeloos
Life of this patent
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Abstract
An ESD protection circuit including an SCR having at least a PNP transistor and at least a NPN transistor such that said PNP transistor is coupled to an anode and the NPN transistor is coupled to a cathode. The circuit also includes a first resistor coupled between the anode and the base of the pnp transistor and a second resistor coupled between the cathode and the base of the npn transistor. A parasitic distributed bipolar transistor is formed between said first and second transistor to control triggering of the SCR.
Claims20
An electrostatic discharge (ESD) protection circuit comprising:
- a silicon controlled rectifier (SCR) comprising at least a PNP transistor and at least an NPN transistor such that the PNP transistor is coupled to an anode of the SCR and the NPN transistor is coupled to a cathode of the SCR;
- a first resistor coupled between the anode of the SCR and the base of the PNP transistor;
- a second resistor coupled between the cathode of the SCR and the base of the NPN transistor;
- and
- a parasitic bipolar transistor formed between the first resistor and the second resistor and comprising the first resistor and the second resistor, wherein the bipolar transistor functions to control triggering of the SCR during an ESD event.
2 more elements
Dependencies are inferred from the claim text.