Metal capacitor including lower metal electrode having hemispherical metal grains

A method of fabricating a metal capacitor, the method comprising:

• forming a plurality of transistors on a substrate;
• forming a first insulating layer on the plurality of transistors;
• forming a conductive via plug through the first insulating layer to contact the substrate;
• forming a second insulating layer on the first insulating layer and the via plug;
• forming a third insulating layer on the second insulating layer;
• forming a hole through the second insulating layer and the third insulating layer thereby exposing the via plug;
• forming a lower metal electrode containing titanium within the hole;
• dipping the lower metal electrode into an electrolyte solution containing palladium, wherein the electrolyte solution is an acidic electrolyte solution comprising a palladium compound, hydrofluoric acid, an acidity controlling agent, a reducing agent, and a complexing agent, thereby forming hemispherical metal grains containing palladium on the lower metal electrode;
• forming a dielectric layer on the lower metal electrode;
• and
• forming an upper metal electrode on the dielectric layer.