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US 7,803,677 B2Granted
Manufacturing method of semiconductor device
AssigneeHynix Semiconductor Inc.
InventorCheol Kyun Kim
Life of this patent
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Abstract
A method of manufacturing a semiconductor device, particularly a vertical transistor, including forming a contact hole and forming a pillar using an epitaxial growth process.
Claims15
A method of manufacturing a semiconductor device, comprising:
- selectively etching a pillar region in a sacrificial layer on a semiconductor substrate to form a contact hole;
- forming a surrounding gate on a side wall of a lower portion of the contact hole;
- and
- forming a growth layer in the contact hole to bury the surrounding gate.
1 more element
Dependencies are inferred from the claim text.