Photomask and its method of manufacture

A semiconductor device that is formed by a method of manufacturing, the method comprising:

• providing a semiconductor substrate that includes an active region defined by an isolation region;
• forming a gate insulating layer and a gate electrode layer on the semiconductor substrate;
• forming a photoresist layer on the gate electrode layer;
• forming a photoresist pattern that defines gate lines on the gate electrode layer by a photolithography process using a photomask using a light having a wavelength;
• and
• forming the gate lines by patterning the gate electrode layer,
• wherein the photomask comprises:
• a photomask substrate;
• gate line mask patterns that define the gate lines, which cross at least one of the active regions on the semiconductor substrate, and are arranged in parallel to each other;
• gate tab mask patterns extending from both sides of the each of the gate line mask patterns;
• joints formed between adjacent gate tab mask patterns;
• and
• a separation region including in the joints.