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US 7,745,331 B2Granted
Method for fabricating contact plug in semiconductor device
AssigneeHynix Semiconductor Inc.
InventorChang-Youn Hwang
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Abstract
An insulation layer including a landing plug is formed over a substrate. An amorphous carbon hard mask is formed over a certain portion of the insulation layer. The insulation layer is etched using the amorphous carbon hard mask to form a storage node contact hole exposing the landing plug. A conductive material is formed in the storage node contact hole to form a storage node contact plug. Other embodiments are also described.
Claims10
A method for fabricating a contact plug in a semiconductor device, comprising:
- forming an insulation layer over a substrate, the insulation layer including a landing plug;
- forming an amorphous carbon layer over the insulation layer;
- forming a photoresist pattern over the amorphous carbon layer;
- etching the amorphous carbon layer and a certain thickness of the insulation layer using the photoresist pattern as an etch barrier to form an amorphous carbon hard mask and a remaining insulation layer, respectively;
- removing the photoresist pattern;
- etching the remaining insulation layer using the amorphous carbon hard mask to form a storage node contact hole exposing the landing plug;
- and
- forming a conductive material in the storage node contact hole to form a storage node contact plug,
- wherein an upper portion of the storage node contact hole includes a vertical profile, and a lower portion beneath the upper portion of the storage node contact hole includes a sloped profile.
6 more elements
Dependencies are inferred from the claim text.