Method for fabricating Schottky barrier tunnel transistor

A method for fabricating a Schottky barrier tunnel transistor, comprising:

• a) forming a silicon pattern and a sacrificial pattern on a buried oxide layer supported by a support substrate;
• b) forming a source/drain region on the buried oxide layer exposed on both sides of the silicon pattern, including the steps of
• b1) forming a photoresist pattern having an opening at a region corresponding to a region where the source/drain region is to be formed, and
• b2) forming the metal layer to fill the opening of the photoresist pattern,
• the source/drain region being formed of a metal layer and being in contact with both sidewalls of the silicon pattern;
• c) removing the sacrificial pattern to expose the top surface of the silicon pattern;
• and
• d) forming a gate insulating layer and a gate electrode on the exposed silicon pattern.

A method for fabricating a Schottky barrier tunnel transistor, comprising:

• a) forming a silicon pattern and a sacrificial pattern on a buried oxide layer supported by a support substrate;
• b) forming a source/drain region on the buried oxide layer exposed on both sides of the silicon pattern, the source/drain region being formed of a metal layer and being in contact with both sidewalls of the silicon pattern;
• c) removing the sacrificial pattern to expose the top surface of the silicon pattern;
• d) forming a gate insulating layer and a gate electrode on the exposed silicon pattern;
• and
• j) performing a thermal treatment to react the metal layer of the source/drain region with silicon of the silicon pattern after forming the gate electrode, thereby forming a metal silicide layer along a boundary between the source/drain region and the silicon pattern.