Methods for surface activation by plasma immersion ion implantation process utilized in silicon-on-insulator structure

A method for promoting interface bonding energy for forming an silicon on insulator (SOI) structure, comprising:

• providing a first substrate and a second substrate in a plasma immersion ion implantation processing chamber, wherein the first substrate has a silicon oxide layer formed thereon and a cleavage plane defined therein;
• removing particles and/or contaminants from surfaces of the first substrate and the second substrate by a dry cleaning process performed in the plasma immersion ion implantation processing chamber;
• activating the cleaned surfaces of the first substrate and the second substrate while removing particles during the dry cleaning process;
• and
• bonding the silicon oxide layer disposed on the first substrate to the activated surface of the second substrate.

A method for promoting interface bonding energy for forming an silicon on insulator (SOI) structure, comprising:

• providing a first substrate and a second substrate, wherein the first substrate has a silicon oxide layer formed thereon and a cleavage plane defined therein;
• performing a dry cleaning process on a surface of the silicon oxide layer and a surface of the second substrate by supplying a halogen containing gas in a plasma immersion ion implantation processing chamber;
• activating the surfaces of the first substrate and the second substrate while performing the dry cleaning process;
• and
• bonding the silicon oxide surface to the activated surface of the second substrate.