Sputtering apparatus of forming thin film
AssigneeCanon Anelva Corporation
InventorMasao Sasaki
Life of this patent
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Abstract
A sputtering deposit apparatus capable of depositing a thin film having uniform sheet resistance value is provided. The sputtering deposit apparatus is arranged with at least two magnetron sputtering units within a film deposit chamber. On the upstream side in the substrate transfer direction 43 of the target shield 55 provided on the magnetron sputtering unit disposed on the most upstream side in the substrate transfer direction, of at least the two magnetron sputtering units, there is disposed the first cathode shield 62 which is electrically insulated.
Claims20
A film deposit apparatus for forming an ITO film, having at least two magnetron sputtering units arranged in a film deposit chamber in a substrate transfer direction to convey substrates while sequentially arranging the substrates opposite each of the magnetron sputtering units in the substrate transfer direction and to sequentially perform sputtering deposit while the substrates are opposed to each of the magnetron sputtering units during conveyance of the substrates, characterized in that:
- each of the magnetron sputtering units comprises:
- a magnet reciprocating in a substrate transfer direction, a target, a target shield of a floating structure provided adjacent to an outer-periphery portion of the target and electrically insulated, and cathode shields provided adjacent to the outside of the target shield, and
- a first cathode shield of the cathode shields provided on the magnetron sputtering unit disposed on the most upstream side in the substrate transfer direction, is of a floating structure electrically insulated, and a second cathode shield, which comprises succeeding cathode shields in the substrate transfer direction, is connected to a ground potential.
A film deposit apparatus for an ITO film, comprising at least two magnetron sputtering units disposed in series and substrate transfer means for transferring a substrate in a substrate transfer direction along the serial direction, characterized in that each of the magnetron sputtering units includes:
- magnet reciprocating means for reciprocating a magnet along the substrate transfer direction;
- target setting means for setting an ITO target;
- a target shield which is disposed at a position adjacent to an outer-periphery portion of the ITO target and is of an electrically-insulated floating structure;
- and cathode shields disposed adjacent to the outside of the target shield, and,
- a first cathode shield of the cathode shields, which is a cathode shield positioned on the most upstream side in the substrate transfer direction, is electrically insulated and is of a floating structure, and a second cathode shield, which comprises succeeding cathode shields in a substrate transfer direction, is connected to a ground voltage.
Dependencies are inferred from the claim text.