Etch stop structure and method of manufacture, and semiconductor device and method of manufacture

A method of manufacturing a semiconductor device, comprising:

• forming an etch stop layer over a first structure by depositing a metal oxide material over the first structure, and annealing the deposited metal oxide material;
• forming a second structure over the etch stop layer;
• and
• etching a formation through the second structure using the etch stop layer as an etch stop
• wherein said annealing is carried out before formation of the second structure and the etch stop layer is formed to include an aluminum oxide (Al2O3) layer, and
• wherein the Al2O3 layer is formed directly on the first structure and the second structure is formed directly on the Al2O3 layer.

A method of manufacturing a semiconductor device, comprising:

• forming an etch stop layer over a first structure by depositing a metal oxide material over the first structure, and annealing the deposited metal oxide material;
• forming a second structure over the etch stop layer;
• and
• etching a formation through the second structure using the etch stop layer as an etch stop,
• wherein said annealing is carried out before formation of the second structure and eth etch stop layer is formed to include a first etch stop layer and a second etch stop layer, and
• wherein the first etch stop layer is a hafnium oxide (HfO2) layer, and the second etch stop layer is a silicon nitride layer.

A method of manufacturing a semiconductor device, comprising:

• forming an etch stop layer over a first structure by depositing a metal oxide material over the first structure, and annealing the deposited metal oxide material;
• forming a second structure over the etch stop layer;
• and
• etching a formation through the second structure using the etch stop layer as an etch stop,
• wherein said annealing is carried out before formation of the second structure and the etch stop layer is formed to include a first etch stop layer and a second etch stop layer, and
• wherein the first etch stop layer is an Al2O3 layer, and the second etch stop layer is a silicon nitride layer.

A method of manufacturing a semiconductor device, comprising:

• forming a first interlayer dielectric (ILD) layer over the surface of a substrate;
• forming a first conductive layer within a first contact hole of the first ILD layer;
• forming an etch stop layer over the first ILD layer and the first conductive layer, wherein the etch stop layer is formed by depositing a metal oxide material, and annealing the deposited metal oxide material, and wherein the etch stop layer is formed to include a first etch stop layer and a second etch stop layer;
• forming a second ILD layer over the etch stop layer;
• etching a second contact hole in the second ILD layer using the etch stop layer as an etch stop, wherein the second contact hole is aligned over the first conductive layer;
• removing an exposed portion of the etch stop layer within the second contact hole;
• and
• forming a second conductive layer in the second contact hole which electrically contacts the first conductive layer;
• and
• further comprising forming an oxide buffer layer between the first and second etch stop layers.