Plasma immersed ion implantation process

A method for implanting ions into a substrate by a plasma immersion ion implantation process, comprising:

• providing a substrate into a processing chamber;
• generating a plasma from a gas mixture comprising a reacting gas and a reducing gas in the chamber;
• and
• implanting ions from the plasma into the substrate by the plasma immersion ion implantation process, wherein the reacting gas comprises BF3 and B2H6 and the reducing gas comprises SiH4.

A method for implanting ions into a substrate by a plasma immersion ion implantation process, comprising:

• providing a substrate into a processing chamber;
• supplying a gas mixture comprising a reacting gas and a hydrogen containing reducing gas selected from a group consisting of SiH4, B2H6, NH3, and H2 into the chamber;
• applying a RF power to form a plasma;
• dissociating the gas mixture as ion species, wherein the ion species from the reducing gas reacts with F ions and pumping out of byproducts from the chamber;
• and
• implanting B ions from the gas mixture into the substrate by the plasma immersion ion implantation process, wherein the reacting gas comprises BF3.