Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductor applications

A method for manufacturing a memory device, comprising:

• performing a shallow trench isolation process on a semiconductor material to form an active region and an isolation region;
• forming a charge trapping structure over the active region, wherein the charge trapping structure is self-aligned;
• separating charge trapping structures at their respective bottom portions;
• forming a first layer of semiconductor or conductive material over the charge trapping structure;
• wherein the trapping structure is self-aligned by depositing a non-conformal film layer over a charge trapping layer, wherein the non-conformal film layer forms a pinch-off or a channel and void region over an STI trench;
• opening up the pinch-off or widening the channel by etch;
• and
• completely or partially etching to separate the trapping structure layer between a plurality of cells for isolation in a subsequent top oxide step.