Substrate processing method, substrate processing apparatus and computer-readable memory medium
AssigneeTokyo Electron Limited
InventorsTakayuki Toshima, Tadashi Iino, Yusuke Saito, Mitsunori Nakamori, Noritaka Uchida, Takehiko Orii
Life of this patent
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Abstract
A substrate processing method which removes an ArF resist film from a wafer having the ArF resist film. As an ultraviolet irradiation process is performed on the ArF resist film, and then an ozone gas and water vapor are fed to the ArF resist film, the ArF resist film is altered in a water-soluble state. Thereafter, the ArF resist film is removed from the substrate by feeding pure water to the ArF resist film altered into the water-soluble state.
Claims23
A substrate processing method for removing an ArF resist film from a substrate having the ArF resist film, comprising the steps of:
- irradiating an ultraviolet ray having a predetermined wavelength to the ArF resist film;
- altering the ArF resist film irradiated with the ultraviolet ray into a water-soluble state by placing the substrate in a chamber and feeding an ozone gas and water vapor to the chamber;
- and
- removing the ArF resist film from the substrate by feeding pure water to the ArF resist film altered into the water soluble state,
- wherein when the water vapor and the ozone gas are fed to the chamber, a feed amount of ozone gas with respect to the water vapor is decreased while the water vapor is fed to said chamber at a constant flow rate in such a way as not to cause dew condensation on the substrate placed in the chamber.
A substrate processing method for removing an antireflection film from a substrate having said antireflection film, comprising the steps of:
- irradiating an ultraviolet ray having a predetermined wavelength to the antireflection film;
- altering the antireflection film irradiated with the ultraviolet ray into a water-soluble state by placing the substrate in a chamber and feeding an ozone gas and water vapor to the chamber;
- and
- removing said antireflection film from the substrate by feeding pure water to said reflection film altered into the water-soluble state,
- wherein when the water vapor and the ozone gas are fed to the chamber, a feed amount of ozone gas with respect to the water vapor is decreased while the water vapor is fed to said chamber at a constant flow rate in such a way as not to cause dew condensation on the substrate placed in the chamber.
A substrate processing method for removing a resist film from a substrate having the resist film undergone an ion implantation process at a high dose, comprising the steps of:
- irradiating an ultraviolet ray having a predetermined wavelength to said resist film;
- altering the resist film irradiated with the ultraviolet ray into a water-soluble state by placing the substrate in a chamber and feeding an ozone gas and water vapor to the chamber;
- and
- removing the resist film from the substrate by feeding pure water to the resist film altered into the water soluble state,
- wherein when the water vapor and the ozone gas are fed to the chamber, a feed amount of ozone gas with respect to the water vapor is decreased while the water vapor is fed to said chamber at a constant flow rate in such a way as not to cause dew condensation on the substrate placed in the chamber.
A substrate processing method for removing an ArF resist film from a substrate having the ArF resist film, comprising the steps of:
- irradiating an ultraviolet ray having a predetermined wavelength to the ArF resist film;
- altering said ArF resist film irradiated with the ultraviolet ray in a such a way as to be soluble with a predetermined chemical solution by placing the substrate in a chamber and feeding an ozone gas and water vapor to the chamber;
- and
- removing the ArF resist film from the substrate by feeding the chemical liquid to the altered ArF resist film,
- wherein when the water vapor and the ozone gas are fed to the chamber, a feed amount of ozone gas with respect to the water vapor is decreased while the water vapor is fed to the chamber at a constant flow rate in such a way as not to cause dew condensation on the substrate placed in the chamber.
A substrate processing method for removing an antireflection film from a substrate having the antireflection film, comprising the steps of:
- irradiating an ultraviolet ray having a predetermined wavelength to the antireflection film;
- altering said antireflection film irradiated with the ultraviolet ray in a such a way as to be soluble with a predetermined chemical liquid by placing the substrate in a chamber and feeding an ozone gas and water vapor to the chamber;
- and
- removing the antireflection film from the substrate by feeding the chemical liquid to the altered antireflection film,
- wherein when the water vapor and the ozone gas are fed to the chamber, a feed amount of ozone gas with respect to the water vapor is decreased while the water vapor is fed to the chamber at a constant flow rate in such a way as not to cause dew condensation on the substrate placed in the chamber.
A substrate processing method for removing a resist film from a substrate having the resist film undergone an ion implantation process at a high dose, comprising the steps of:
- irradiating an ultraviolet ray having a predetermined wavelength to the resist film;
- altering the resist film irradiated with the ultraviolet ray in a such a way as to be soluble with a predetermined chemical liquid by placing said substrate in a chamber and feeding an ozone gas and water vapor to the chamber;
- and
- removing the resist film from the substrate by feeding the chemical liquid to the altered resist film,
- wherein when the water vapor and the ozone gas are fed to the chamber, a feed amount of ozone gas with respect to the water vapor is decreased while the water vapor is fed to the chamber at a constant flow rate in such a way as not to cause dew condensation on the substrate placed in the chamber.
A computer-readable memory medium having stored a program which causes a computer to controls a substrate processing apparatus which processes a substrate placed in a chamber having a heating mechanism with water vapor and ozone gas to execute the processes of (a) placing a substrate having any one of an ArF resist film, an antireflection film, and a high-dose-ion-implanted resist film, which has undergone an ultraviolet irradiation process in the chamber, (b) keeping an interior of the chamber at a predetermined temperature, and (c) altering the film so as to be soluble with a predetermined process liquid by reducing a feed amount of ozone gas into the chamber while the water vapor is fed into the chamber at a constant flow rate in such a way as not to cause dew condensation on the substrate.
Dependencies are inferred from the claim text.