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US 7,682,969 B2Granted
Method of fabricating semiconductor device
AssigneeDongbu HiTek Co., Ltd.
InventorsKyeong-Sik Lee, Joog-Guk Kim
Life of this patent
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Abstract
A method of forming a semiconductor device that includes heating a wafer on which an Al—Cu sputtering thin film is formed before patterning the Al—Cu sputtering thin film. The heating is performed at a temperature no less than a solid solution temperature of copper or at a temperature between 300° C. and 600° C. The process temperature in heating the process wafer is not higher than the flow temperature of aluminum or is the temperature at which a reflow process can be performed.
Claims20
A method comprising:
- forming a partially laminated metal film as a wiring line layer on a wafer;
- and then
- heating the wafer including the wiring line layer in a sputtering chamber at a first predetermined temperature after forming the wiring line layer;
- and then
- performing a process which completely laminates the wiring line layer on the wafer;
- and then
- heating the wafer and the wiring line layer at a second predetermined temperature after completely laminating the wiring line layer on the wafer;
- and then
- patterning the completely laminated wiring line layer.
6 more elements
A method comprising:
- forming a partially laminated metal wiring line layer on a wafer;
- and then
- performing a first heating process on the wafer and the partially laminated metal wiring line layer;
- and then
- performing a process which completely laminates the metal wiring line layer on the wafer;
- and then
- performing a second heating process on the wafer and the completely laminated metal wiring line layer;
- and then
- performing a cooling process on the wafer after performing the second heating process;
- and then
- patterning the metal wiring line after performing the cooling process.
8 more elements
A method comprising:
- partially laminating an aluminum-copper wiring layer on a wafer;
- and then
- performing a first heating process on the wafer and the partially laminated aluminum-copper wiring;
- and then
- completely laminating the aluminum-copper wiring layer on the wafer;
- and then
- performing a second heating process on the wafer at a temperature not lower than a solid solution temperature for a copper component in the aluminum-copper wiring layer while simultaneously reflowing an aluminum component in the completely laminated aluminum-copper wiring;
- and then
- performing a cooling process on the wafer after performing the second heating process;
- and then
- patterning the aluminum-copper wiring after performing the cooling process.
8 more elements
Dependencies are inferred from the claim text.