Method for manufacturing semiconductor device
AssigneeDongbu Electronics Co., Ltd.
InventorsSang Chul Kim, Han Choon Lee
Life of this patent
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Abstract
Provided is a method for manufacturing a semiconductor device. An insulation layer is formed on a bottom structure of a semiconductor substrate. Then, a trench and a via hole are formed by selectively etching the insulation layer, and a copper layer is deposited to fill the via hole and the trench. Next, a copper line is formed by a CMP (chemical mechanical polishing) process to planarize the copper layer, and a plasma process is performed to form a plasma-treated surface layer of the semiconductor substrate. The plasma-treated surface layer is then removed.
Claims18
A method for manufacturing a semiconductor device, the method comprising:
- forming an insulation layer on a bottom structure of a semiconductor substrate;
- forming a trench and a via hole by selectively etching the insulation layer;
- forming a copper layer on an entire surface of the semiconductor substrate until filling the via hole and the trench;
- planarizing the copper layer by chemical mechanical polishing to form a copper line filling the via hole and the trench;
- performing a plasma process to form a plasma-treated surface layer on the semiconductor substrate;
- and
- removing the plasma-treated surface layer, wherein removing the surface layer of the Semiconductor substrate comprises:
- performing a radio frequency pre-clean process using an Ar plasma, and a Ge ion implantation process.
A method for manufacturing a semiconductor device, the method comprising:
- forming an insulation layer on a bottom structure of a semiconductor substrate;
- forming a trench and a via hole by selectively etching the insulation layer;
- forming a copper layer on an entire surface of the semiconductor substrate until filling the via hole and the trench;
- planarizing the copper layer by chemical mechanical polishing to form a copper line filling the via hole and the trench;
- performing a plasma process to form a plasma-treated surface layer on the semiconductor substrate;
- and
- removing the plasma-treated surface layer, wherein removing the surface layer of the semiconductor substrate comprises a Ge ion implantation process.
A method for a semiconductor device, the method comprising:
- forming an insulation layer on a bottom structure of a semiconductor substrate;
- forming a trench and a via hole by selectively etching the insulation layer;
- forming a copper layer on an entire surface of the semiconductor substrate until filling the via hole and the trench;
- planarizing the copper layer by a chemical mechanical polishing process to form a copper line filling the via hole and the trench;
- amorphizing a surface layer of the semiconductor substrate having the copper line thereon;
- performing a plasma process to form a plasma-treated, amorphous surface layer;
- and
- removing the plasma-treated, amorphous surface layer.
Dependencies are inferred from the claim text.