Method for fabricating vertical channel transistor in a semiconductor device
AssigneeHynix Semiconductor Inc.
InventorsJun-Hee Cho, Sang-Hoon Park
Life of this patent
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Abstract
A method for fabricating a semiconductor device includes forming a sacrificial layer over a substrate, forming a contact hole in the sacrificial layer, forming a pillar to fill the contact hole. The pillar laterally extends up to a surface of the sacrificial layer and then the sacrificial layer is removed. The method further includes forming a gate dielectric layer over an exposed sidewall of the pillar, and forming a gate electrode over the gate dielectric layer. The gate electrode surrounds the sidewall of the pillar.
Claims25
A method for fabricating a semiconductor device, the method comprising:
- forming a sacrificial layer over a substrate;
- forming a contact hole in the sacrificial layer;
- forming a pillar, said pillar filling the contact hole and extending above a top surface of the sacrificial layer;
- removing the sacrificial layer;
- forming a gate dielectric layer over an exposed sidewall of the pillar and an exposed portion of the substrate;
- and
- forming a gate electrode over the gate dielectric layer, wherein
- the gate electrode surrounds at least a portion of the gate dielectric layer formed on the exposed sidewall of the pillar.
A method for fabricating a pillar of a semiconductor device, the method comprising:
- forming a sacrificial layer over a substrate;
- forming a contact hole in the sacrificial layer;
- forming a body pillar, said body pillar filling the contact hole;
- forming a head pillar on the body pillar, the head pillar laterally extending on a top surface of the sacrificial layer;
- and
- removing the sacrificial layer,
- wherein the head pillar is formed through an etching process using a photoresist pattern as an etch barrier, the photoresist pattern having a width greater than that of the contact hole.
Dependencies are inferred from the claim text.