Manufacturing method of SOI substrate and manufacturing method of semiconductor device

A method for manufacturing an SOI substrate comprising the steps of:

• forming a semiconductor layer over a support substrate by separating the semiconductor layer from a single-crystal semiconductor substrate;
• irradiating the semiconductor layer with light having a wavelength of 365 nm or more and 700 nm or less from a side of the semiconductor layer;
• and
• controlling a film thickness d of the semiconductor layer irradiated with the light so as to satisfy:
• d=λ/2n×m±α (nm),
• wherein λ (nm) is a wavelength of the light, n is a refractive index of the semiconductor layer, m is a natural number greater than or equal to 1, and α is a parameter which satisfies 0≦α≦10.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer over a support substrate by separating the semiconductor layer from a single-crystal semiconductor substrate;
• irradiating the semiconductor layer with light having a wavelength of 365 nm or more and 700 nm or less from the semiconductor layer side;
• and
• forming a semiconductor element using the semiconductor layer,
• wherein a film thickness d of the semiconductor layer irradiated with the light satisfies:
• d=λ/2n×m±α (nm),
• wherein λ (nm) is a wavelength of the light, n is a refractive index of the semiconductor layer, m is a natural number greater than or equal to 1, and α is a parameter which satisfies 0≦α≦10.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer over a support substrate by separating the semiconductor layer from a single-crystal semiconductor substrate;
• irradiating the semiconductor layer with light having a wavelength of 365 nm or more and 700 nm or less from a side of the semiconductor layer;
• controlling a film thickness d of the semiconductor layer irradiated with the light so as to satisfy:
• d=λ/2n×m±α (nm);
• and
• forming a semiconductor element using the semiconductor layer,
• wherein λ (nm) is a wavelength of the light, n is a refractive index of the semiconductor layer, m is a natural number greater than or equal to 1, and α is a parameter which satisfies 0≦α≦10.