Method and apparatus for generating OPC rules for placement of scattering bar features utilizing interface mapping technology

A computer implemented method of generating a mask having a plurality of features to be imaged and optical proximity correction features disposed therein, said computer implemented method comprising the steps of:

• defining a set of process parameters to be utilized to image said mask;
• defining a set of pitch ranges corresponding to pitches exhibited by said plurality of features to be imaged;
• determining an interference map for at least one of said pitch ranges;
• and
• said computer generating a set of rules for positioning scattering bars adjacent said plurality of features based on said interference map, said set of rules governing scattering bar placement adjacent features of said plurality of features having a pitch which falls within said at least one of said pitch ranges.

An apparatus for generating a mask having a plurality of features to be imaged and optical proximity correction features disposed therein, said apparatus comprising:

• means for defining a set of process parameters to be utilized to image said mask;
• means for defining a set of pitch ranges corresponding to pitches exhibited by said plurality of features to be imaged;
• means for determining an interference map for at least one of said pitch ranges;
• and
• means for generating a set of rules for positioning scattering bars adjacent said plurality of features based on said interference map, said set of rules governing scattering bar placement adjacent features of said plurality of features having a pitch which falls within said at least one of said pitch ranges.

A computer program product for controlling a computer comprising a recording medium readable by the computer, means recorded on the recording medium for directing the computer to generate files corresponding to a mask having a plurality of features to be imaged in an lithographic imaging process, said generation of said files comprising the steps of

• defining a set of process parameters to be utilized to image said mask;
• defining a set of pitch ranges corresponding to pitches exhibited by said plurality of features to be imaged;
• determining an interference map for at least one of said pitch ranges;
• and
• generating a set of rules for positioning scattering bars adjacent said plurality of features based on said interference map, said set of rules governing scattering bar placement adjacent features of said plurality of features having a pitch which falls within said at least one of said pitch ranges.

A device manufacturing method comprising the steps of:

• (a) providing a substrate that is at least partially covered by a layer of radiation-sensitive material;
• (b) providing a projection beam of radiation using an imaging system;
• (c) generating a mask having a plurality of feature, said mask utilized to endow the projection beam with a pattern in its cross-section;
• (d) projecting the patterned beam of radiation onto a target portion of the layer of radiation sensitive material, wherein, in step (c), said mask is formed by a method comprising the steps of:
• defining a set of process parameters to be utilized to image said mask;
• defining a set of pitch ranges corresponding to pitches exhibited by said plurality of features to be imaged;
• determining an interference map for at least one of said pitch ranges;
• and
• generating a set of rules for positioning scattering bars adjacent said plurality of features based on said interference map, said set of rules governing scattering bar placement adjacent features of said plurality of features having a pitch which falls within said at least one of said pitch ranges.