Semiconductor devices with layers having extended perimeters for improved cooling and methods for cooling semiconductor devices

A semiconductor module, comprising:

• a housing having a cavity therein;
• at least one semiconductor device residing within the cavity, wherein the at least one semiconductor device comprises:
• a wafer having first and second opposed metallized major faces;
• a transistor bonded to the first metallized face of the wafer, wherein the transistor includes a first surface, and wherein the first surface defines a first area;
• a first metal layer bonded to the first surface of the transistor, wherein the first metal layer has a first surface that defines a second area larger than the first area of the transistor, wherein the first metal layer has a plurality of extended perimeter areas, the plurality of extended perimeter areas including a first extended perimeter area extending from a first side of the first metal layer and forming a contact, a second extended perimeter area extending from a second side of the first metal layer, and a third extended perimeter area extending from a third side of the first metal layer;
• a ceramic layer bonded to the first metal layer;
• and
• a cooling system comprising:
• a flow passageway through the housing and fluidly coupled to the cavity, wherein said cooling system is configured to circulate a coolant fluid through said the flow passageway and in contact with the first metal layer of the at least one semiconductor device.

A method for cooling a semiconductor device with a first metal layer bonded to a transistor, the first metal layer having at least three sides with extended perimeter areas, the method comprising the steps of:

• circulating a coolant fluid through a flow passageway;
• directing the coolant fluid onto the extended perimeter areas on the at least three sides of the first metal layer of the semiconductor device;
• and
• collecting the coolant fluid and recirculating the coolant fluid through the flow passageway.