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US 7,612,387 B2Granted
Thyristor optimized for a sinusoidal HF control
AssigneeSTMicroelectronics S.r.l.
InventorsChristophe Mauriac, Samuel Menard
Life of this patent
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Abstract
A vertical thyristor adapted to an HF control, including a cathode region in a P-type base well, a lightly-doped P-type layer next to the base well, a lightly-doped N-type region in the lightly-doped P-type layer, a Schottky contact on the lightly-doped N-type region connected to a control terminal, and a connection between the lightly-doped N-type region and the P-type base well.
Claims4
A vertical thyristor adapted to an HF control, comprising a cathode region in a P-type base well, and comprising:
- a lightly-doped P-type layer next to the base well,
- a lightly-doped N-type region in said lightly-doped P-type layer,
- a Schottky contact on the lightly-doped N-type region connected to a control terminal, and
- a connection between the lightly-doped N-type region and the P-type base well, wherein the connection between the lightly-doped N-type region and the P-type base well is formed via a more heavily-doped N-type region formed in the lightly-doped N-type region.
1 more element
A vertical thyristor comprising:
- a semiconductor substrate;
- an anode region on a rear surface of the semiconductor substrate;
- a cathode region in a P-type base well on a front surface of the semiconductor substrate;
- a lightly-doped P-type layer next to the P-type base well;
- a lightly-doped N-type region in the lightly-doped P-type layer;
- a Schottky contact on the lightly-doped N-type region, the Schottky contact connected to a control terminal;
- and
- a connection between the lightly-doped N-type region and the P-type base well, wherein the connection between the lightly-doped N-type region and the P-type base well includes a more heavily-doped N-type region in the lightly-doped N-type region.
5 more elements
Dependencies are inferred from the claim text.