Gate electrode dopant activation method for semiconductor manufacturing

A method for forming a doped silicon-containing material on a substrate, comprising:

• depositing a polycrystalline layer on a dielectric layer;
• implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer having a dopant concentration within a range from about 1×1019 atoms/cm3 to about 1×1021 atoms/cm3, wherein the doped polycrystalline layer comprises silicon, carbon, and boron;
• exposing the substrate to a rapid thermal anneal;
• and
• exposing the doped polycrystalline layer to a laser anneal.

A method for forming a doped silicon-containing material on a substrate, comprising:

• depositing a silicon-containing layer on a substrate;
• implanting the silicon-containing layer with a dopant to form a doped silicon-containing layer containing a dopant concentration within a range from about 1×1019 atoms/cm3 to about 1×1021 atoms/cm3, wherein the doped silicon-containing layer further comprises carbon;
• exposing the doped silicon-containing layer to a rapid thermal anneal;
• and
• heating the doped silicon-containing layer to a temperature of about 1,000° C. or greater during a laser anneal.