Method of forming a bipolar transistor and semiconductor component thereof

A method of forming a bipolar transistor comprising:

• forming a first dielectric layer over a semiconductor substrate;
• forming a base electrode for the bipolar transistor over the first dielectric layer;
• forming an oxide nitride structure over the base electrode;
• forming a second dielectric layer over the oxide nitride structure and the first dielectric layer;
• anisotropically etching a portion of the second dielectric layer to form a first spacer adjacent to the base electrode and the oxide nitride structure;
• removing a top layer of the oxide nitride structure after anisotropically etching the portion of the second dielectric layer;
• removing a first portion of the first dielectric layer to expose a portion of the semiconductor substrate;
• growing an epitaxial layer over the portion of the silicon substrate;
• forming a second spacer over the epitaxial layer;
• forming an emitter electrode aver the apitaxial to the first spacer and the second spacer;
• forming a third spacer adjacent to the oxide nitride structure before forming the second dielectric layer;
• and
• removing the third spacer,
• wherein:
• removing the third spacer, removing the top layer of the oxide nitride structure, and removing the first portion of the first dielectric layer occur simultaneously with each other.

A method of forming a bipolar transistor comprising:

• forming a first dielectric layer over a semiconductor substrate;
• forming a base electrode for the bipolar transistor over the first dielectric layer;
• forming a first oxide layer over the base electrode;
• forming a first nitride layer over the first oxide layer;
• forming a second oxide layer over the first nitride layer, wherein the first oxide lever, the first nitride layer, and the second oxide layer form an oxide nitride structure;
• forming a first spacer adjacent to the oxide nitride structure and the base electrode;
• removing the second oxide layer;
• removing a first portion of the first dielectric layer;
• forming an epitaxial layer over the semiconductor substrate;
• forming second spacer over a portion of the epitaxial layer and adjacent to the second spacer;
• and
• removing the third spacer,
• wherein:
• removing the third spacer, removing the second oxide layer, and removing a first portion of the first dielectric layer occur simultaneously with each other and occur after forming the first spacer.