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US 7,611,825 B2Granted
Photolithography method to prevent photoresist pattern collapse
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChing-Yu Chang, Kuei Shun Chen, Bang-Ching Ho
Life of this patent
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Abstract
A method comprises forming a BARC layer on a substrate, treating the BARC layer to make its surface hydrophilic, forming a photoresist layer on the treated BARC layer, exposing the photoresist layer to a predetermined pattern, and developing the photoresist layer to form patterned photoresist.
Claims26
A method, comprising:
- forming an intermediary material layer on a substrate, wherein forming the intermediary material layer comprises forming an organic bottom anti-reflective coating layer;
- treating the intermediary material layer to make its surface substantially hydrophilic, thereby forming a treated intermediary material layer, wherein the treating the intermediary material layer includes at least one of a plasma treatment, an exposure to ultraviolet radiation, and a ion implantation treatment;
- thereafter forming a photoresist layer directly on the treated intermediary material, wherein the forming the photoresist layer includes forming an interface between the photoresist layer and the surface of the treated intermediary material layer;
- exposing the photoresist layer to a predetermined pattern;
- and
- developing the photoresist layer to form patterned photoresist.
3 more elements
A method, comprising:
- forming an intermediary material layer on a substrate, wherein forming the intermediary material layer comprises forming an organic bottom anti-reflective coating layer;
- treating the intermediary material layer to make its surface substantially hydrophilic, wherein the treating the intermediary material layer includes at least one of a plasma, an ion implantation, and a UV radiation;
- after treating the intermediary layer, forming a hexamethyldisilazane (HMDS) coating on the treated intermediary material layer;
- and
- forming a photoresist layer on the HMDS coating.
2 more elements
A method, comprising:
- forming an organic BARC layer on a substrate;
- exposing the BARC layer to a plasma to make its surface substantially hydrophilic;
- forming a photoresist layer directly on the exposed BARC layer;
- exposing the photoresist layer to a predetermined pattern;
- and
- developing the photoresist layer to form patterned photoresist.
3 more elements
A method, comprising:
- forming a BARC layer on a semiconductor substrate;
- exposing the BARC layer to ultraviolet radiation to make its surface substantially hydrophilic, wherein the exposing the BARC includes exposing to a first radiation beam;
- forming a photoresist layer directly on the exposed BARC layer, wherein the forming the photoresist layer is performed after the exposing the BARC layer to ultraviolet radiation;
- exposing the photoresist layer to a predetermined pattern, wherein the exposing the photoresist uses a second radiation beam;
- and
- developing the photoresist layer to form patterned photoresist.
3 more elements
A method, comprising:
- forming a BARC layer on a substrate;
- treating the BARC layer, wherein the treating comprises implanting ions in the BARC layer to make its surface substantially hydrophilic, wherein the ions are selected from the group consisting of nitrogen, argon, helium, phosphorous, arsenic, boron, silicon, and hydrogen, wherein the treating is performed on the entire surface of the BARC layer;
- forming a photoresist layer on the treated BARC layer;
- exposing the photoresist layer to a predetermined pattern;
- and
- developing the photoresist layer to form patterned photoresist.
3 more elements
A method, comprising:
- forming an organic BARC layer on a substrate;
- treating the BARC layer the treating including exposing the BARC layer to a plasma to make its surface substantially hydrophilic and rough;
- forming a photoresist layer on the treated BARC layer;
- exposing the photoresist layer to a predetermined pattern;
- and
- developing the photoresist layer to form patterned photoresist.
3 more elements
Dependencies are inferred from the claim text.