Halftone type phase shift mask blank and halftone type phase shift mask
AssigneeHoya Corporation
InventorsMasao Ushida, Minoru Sakamoto, Naoki Nishida
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Abstract
A halftone type phase shift mask having a semitranslucent film pattern and a shielding film pattern provided on a transparent substrate in this order is constituted in such a manner that each of the reflectances of the transparent substrate, the semitranslucent film pattern and the shielding film pattern for an inspecting light represents a difference which can detect the semitranslucent film pattern and the shielding film pattern based on a reflected light generated when the inspecting light is irradiated on the mask.
Claims16
A halftone type phase shift mask comprising:
- a transparent substrate;
- a semitranslucent film pattern formed on the transparent substrate and having a predetermined transmittance and a phase shift amount for an exposed light;
- and
- a shielding film pattern formed on the semitranslucent film pattern,
- wherein reflectances of the transparent substrate, the semitranslucent film pattern and the shielding film pattern for an inspecting light, which is used for inspecting the halftone type phase shift mask, are different from each other by 3% or more.
A halftone type phase shift mask comprising:
- a transparent substrate;
- a semitranslucent film pattern formed on the transparent substrate and having a predetermined transmittance and a phase shift amount for an exposed light;
- and
- a shielding film pattern formed on the semitranslucent film pattern,
- wherein in the wavelength region of no less than 365 nm of said inspection light, a reflectance of the shielding film pattern is larger than a reflectance of the semitranslucent film pattern.
A halftone type phase shift mask comprising:
- a transparent substrate;
- a semitranslucent film pattern formed on the transparent substrate and having a predetermined transmittance and a phase shift amount for an exposed light;
- and
- a shielding film pattern formed on the semitranslucent film pattern,
- wherein in the wavelength region ranging from 190 nm to 840 nm, a reflectance of the shielding film pattern is larger than a reflectance of the semitranslucent film pattern.
Dependencies are inferred from the claim text.