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US 7,608,885 B2Granted
Flash memory device and method of manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorsKwon Hong, Eun Shil Park, Min Sik Jang
Life of this patent
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Abstract
A non-volatile memory device has a gate dielectric film formed between a floating gate and a control gate. The gate dielectric film is formed by forming an oxide film and a ZrO2/Al2O3/ZrO2 (ZAZ) film. Accordingly, the reliability of non-volatile memory devices can be improved while securing a high coupling ratio.
Claims6
A non-volatile memory device, comprising:
- a tunnel dielectric film formed over a semiconductor substrate;
- a floating gate formed over the tunnel dielectric film;
- a gate dielectric film formed over the floating gate, the gate dielectric film having a ZrO2—Al2O3—ZrO2—SiO2 (ZAZO) structure, the ZAZO structuring including a first ZrO2 film, an Al2O3 film over the first ZrO2 film, a second ZrO2 film over the Al2O3 film, and a first SiO2 film over the second ZrO2 film;
- and
- a control gate formed over the gate dielectric film.
2 more elements
Dependencies are inferred from the claim text.