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US 7,608,880 B2Granted
Semiconductor memory device having a peripheral region including operating capacitors
AssigneeSamsung Electronics Co., Ltd.
InventorsBo-Tak Lim, Su-Yeon Kim, Jong-Pil Son, Gong-Heum Han
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Abstract
A semiconductor memory device comprises a cell region including a plurality of unit memory cells, and a peripheral circuit region, the peripheral circuit region including a plurality of peripheral circuit devices for operating the plurality of memory cells and at least one operating capacitor formed adjacent to at least one peripheral circuit device at a pseudo circuit pattern region.
Claims7
A semiconductor memory device, comprising:
- a peripheral circuit region comprising a plurality of peripheral circuit devices including first transistors and second transistors and at least one operating capacitor formed adjacent to at least one peripheral circuit device;
- and
- a cell region having the plurality of unit memory cells,
- wherein a pattern density of the peripheral circuit region and a pattern density of the cell region are substantially the same without using a dummy pattern in the peripheral circuit region.
1 more element
Dependencies are inferred from the claim text.