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US 7,608,867 B2Granted
Vertical IMOS transistor having a PIN diode formed within
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorsClément Charbuillet, Thomas Skotnicki, Alexandre Villaret
Life of this patent
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Abstract
A vertical IMOS-type transistor including: a stack of a first semiconductor portion doped with dopant elements of a first type, of a second substantially undoped intrinsic semiconductor portion, and of a third semiconductor portion doped with dopant elements of a second type forming a PIN-type diode; and a conductive gate placed against the stack with an interposed insulating layer.
Claims9
A vertical IMOS-type transistor comprising:
- a conductive access area placed in a upper part of a substrate and surrounded with an insulating area;
- a stack of a first semiconductor portion doped with dopant elements of a first type, of a second substantially undoped intrinsic semiconductor portion, and of a third semiconductor portion doped with dopant elements of a second type forming a PIN-type diode, the stack being placed on the conductive access area, said third portion being placed on the top of the stack and partly disposed on top of said insulating area to form an extension;
- a conductive gate placed against said stack with an interposed insulating layer;
- and
- at least one first contact electrically connected to the extension providing access to said third portion to form the vertical IMOS-type transistor.
2 more elements
A vertical IMOS-type transistor comprising:
- a conductive area surrounded by an insulating area;
- a stack of a first semiconductor portion doped with dopant elements of a first type, of a second substantially undoped intrinsic semiconductor portion, and of a third semiconductor portion doped with dopant elements of a second type, said third portion being placed on the top of the stack, the stack placed on the conductive area and said third portion is partly disposed on top of said insulating area to form an extension;
- a conductive gate connected to said stack;
- and
- at least one contact electrically connected to the extension providing access to said third portion to form the vertical IMOS-type transistor.
2 more elements
Dependencies are inferred from the claim text.