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AssigneeShin-Etsu Handotai Co., Ltd.
InventorsIsao Yokokawa, Kiyoshi Mitani
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Disclosed is a method for cleaning a multilayer substrate at least having a silicon single crystal wafer with a SiGe layer epitaxially grown on a surface of the silicon single crystal wafer, where the SiGe layer is an outermost surface of the SiGe layer and then cleaning the multilayer substrate with a first cleaning liquid capable of etching the protective film so that the protective film remains. The protective film prevents roughening of the surface of the SiGe layer while the cleaning is performed. The cleaning is performed. The cleaning is performed so that a thickness of the remaining protective film is from 1 nm to 100 nm.
A method for cleaning a multilayer substrate at least having a silicon single crystal wafer with a SiGe layer epitaxially grown on a surface of the silicon single crystal wafer, wherein the SiGe layer is an outermost surface layer of the substrate, the method comprising:
A method for cleaning a multilayer substrate at least having a silicon single crystal wafer with a SiGe layer epitaxially grown on a surface of the silicon single crystal wafer, wherein the SiGe layer is an outermost surface layer of the substrate, the method comprising:
Dependencies are inferred from the claim text.