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US 7,608,543 B2Granted
Method for planarizing thin layer of semiconductor device
AssigneeHynix Semiconductor Inc.
InventorJae Gon Choi
Life of this patent
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Abstract
A method for planarizing a layer of a semiconductor device includes depositing a high density plasma (HDP) oxide layer over a wafer to have a reflective index distribution that is inversely proportional to a thickness distribution of the HDP oxide layer. A chemical mechanical polishing process is performed on the HDP oxide layer.
Claims17
A method for planarizing a layer of a semiconductor device, the method comprising:
- forming a target layer over a substrate having first and second regions to have a reflective index distribution, wherein a first portion of the target layer deposited on the first region is provided with a first reflective index and a second portion of the target layer deposited on the second region is provided with a second reflective index, wherein first region is different from second region and a first reflective index is different from a second reflective index;
- and
- performing the chemical mechanical polishing (CMP) process to planarize the target layer.
A method for planarizing a layer of a semiconductor device, the method comprising:
- depositing a high density plasma deposition (HDP) oxide layer over a wafer to have a lower reflective index at a central region of the wafer than that at a peripheral region;
- and
- performing a chemical mechanical polishing process on the HDP oxide layer,
- wherein the HDP oxide layer has a greater thickness at the peripheral region than at the central region.
1 more element
A method for planarizing a layer of a semiconductor device, the method comprising:
- depositing a high density plasma (HDP) oxide layer over a wafer to have a reflective index distribution that is inverse proportional to a thickness distribution of the HDP oxide layer;
- and
- performing a chemical mechanical polishing process on the HDP oxide layer.
Dependencies are inferred from the claim text.