Method for forming metal contact in semiconductor device
AssigneeHynix Semiconductor Inc.
InventorHyun Phill Kim
Life of this patent
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Abstract
An interlayer insulation layer is formed on a semiconductor substrate to cover a lower wiring layer that is also formed on the semiconductor substrate. A contact hole to expose a surface of the lower wiring layer is formed by etching the interlayer insulation film. A wetting layer is formed on an inner wall of the contact hole. An anti-deposition layer is formed around an entrance of the contact hole to prevent an aluminum layer from being deposited around the entrance of the contact hole. The contact hole is filled with the aluminum layer.
Claims8
A method for forming a metal contact in a semiconductor device, the method comprising:
- forming an interlayer insulation layer over a lower wiring layer that is formed over the semiconductor substrate;
- etching the interlayer insulation layer to form a contact hole, wherein the contact hole exposes a surface of the lower wiring layer;
- forming a wetting layer on an inner wall of the contact hole;
- forming an anti-deposition layer comprising tungsten (W) around an entrance of the contact hole to prevent an aluminum layer from being deposited around the entrance of the contact hole;
- and
- filling the contact hole with the aluminum layer.
Dependencies are inferred from the claim text.