Top antireflective coating composition containing hydrophobic and acidic groups

A method of forming a patterned layer on a substrate, the method comprising:

• providing a substrate having a material layer on a surface thereof;
• depositing a photoresist composition on the substrate to form a photoresist layer on the material;
• applying a top antireflective coating and barrier layer material on the photoresist layer to form a top antireflective and barrier layer, said top antireflective coating and barrier layer material comprising a polymer selected from the group consisting of poly(2-acrylamido-2-methyl-1-propanesulfonic acid, 4,4,-ditrifluoromethyl-4-hydroxybutan-2-yl methacrylate);
• poly[2-acrylamido-2-methyl-1-propanesulfonic acid, 14,4,-ditrifluoromethyl-4-hydroxybutan-2-yl methacrylate acrylate, (perfluorooctyl)propyl methacrylate];
• poly(2-acrylamido-2-methyl-1-propanesulfonic acid, 4,4,-ditrifluoromethyl-4-hydroxybutan-2-yl methacrylate, 5-methacryloyloxy-2,6-norbornanecarbo-gamma-lactone);
• poly(2-acrylamido-2-methyl-1-propanesulfonic acid, 4,4,-ditrifluoromethyl-4-hydroxybutan-2-yl methacrylate, hydroxymethyladamantylmethacrylate);
• poly(2-acrylamido-2-methyl-1-propanesulfonic acid, 4,4,-ditrifluoromethyl-4-hydroxybutan-2-yl methacrylate, lauryl methacrylate);
• poly(2-acrylamido-2-methyl-1-propanesulfonic acid, 4,4,-ditrifluoromethyl-4-hydroxybutan-2-yl methacrylate, isobornyl methacrylate);
• poly(2-acrylamido-2-methyl-1-propanesulfonic acid, 4,4,-ditrifluoromethyl-4-hydroxybutan-2-yl methacrylate, 3-bicyclo[3,3,0]octane methacrylate);
• poly[(2-acrylamido-2-methyl-1-propanesulfonic acid, 4,4,-ditrifluoromethyl-4-hydroxybutan-2-yl methacrylate, methacyloxypropyltris(trimethylsiloxy)silane];
• and poly(2-sulfoethylmethacrylate, 4,4,-ditrifluoromethyl-4-hydroxybutan-2-yl methacrylate, 4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,11-heptadecafluoro-2-hydroxyundecyl acrylate);
• pattern-wise exposing the photoresist layer and the top antireflective and barrier layer to an imaging radiation;
• removing the top antireflective and barrier layer and the exposed portions of the photoresist layer to form a patterned photoresist layer on the material layer;
• and
• transferring the pattern in the photoresist layer to the material layer.