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US 7,608,370 B2Granted
Exposure mask and method for manufacturing semiconductor device using the same
AssigneeHynix Semiconductor Inc.
InventorsSang Jun Han, Myung Goon Gil
Life of this patent
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Abstract
An exposure mask of a semiconductor device comprises a substrate. Recesses are etched on a surface of the substrate to change a refractive index of an incident light. The changed refractive index causes a diffraction angle of the incident light to increase or decrease. As a result of the change in the diffraction angle, ultra fine patterns for highly integrated semiconductor devices may be formed without being adversely impacted by a proximity effect.
Claims20
An exposure mask of a semiconductor device, the mask comprising:
- a substrate;
- a plurality of opaque patterns formed over the substrate;
- and
- a plurality of transparent scratch patterns formed over the substrate between adjacent opaque patterns,
- wherein the transparent scratch patterns include a plurality of recesses formed in a discrete step-wise manner, a circumference of each recess decreasing in discrete steps as a depth of the substrate increases.
2 more elements
An exposure mask of a semiconductor device, the mask comprising:
- a substrate;
- a plurality of opaque patterns formed over the substrate;
- and
- a plurality of recess pattern formed over the substrate between adjacent opaque patterns, wherein the transparent scratch patterns include a plurality of recesses, a circumference of each recess decreasing as a depth of the substrate increases.
1 more element
Dependencies are inferred from the claim text.