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US 7,608,196 B2Granted
Method of forming high aspect ratio apertures
AssigneeMicron Technology, Inc.
InventorsKevin G. Donohoe, David S. Becker
Life of this patent
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Abstract
A plasma etch process for etching a dielectric material employing two primary etchants at low flows and pressures, and a relatively low temperature environment within the etch chamber. The two primary etchant gases are CHF3 and CH2F2, delivered at flow rates on the order of between about 10 sccm and 40 sccm for CHF3 and between about 10 sccm and 40 sccm for CH2F2. Small quantities, on the order of 10 sccm or less, of other gases such as C2HF5 and CF4 may be added.
Claims14
A method for plasma etching a dielectric material, comprising:
- applying a mask over a dielectric material so as to leave at least one aperture in the mask through which a surface of the dielectric material is exposed;
- disposing a wafer comprising the dielectric material and the mask in a plasma etch chamber, the plasma etch chamber having a roof over the wafer, a ring around the wafer, and a chuck supporting the wafer;
- maintaining the roof at a temperature between about 115° C. and about 150° C.;
- maintaining the ring at a temperature between about 200° C. and about 250° C.;
- maintaining the chuck at a temperature between about −10° C. and 30° C.;
- and
- generating a gas plasma into an area proximate the at least one aperture, the gas plasma consisting of CHF3 and CH2F2 and none or at least one of argon, C2HF5, and CF4.
4 more elements
Dependencies are inferred from the claim text.