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US 7,607,828 B2Granted
Methods and systems for protection from over-stress
AssigneeInfineon Technologies AG
InventorsRobert Carl Beier, Raymond Joseph Notarantonio
Life of this patent
Estimating the term…
Abstract
One embodiment of the invention relates to a circuit for over-stress protection. The circuit includes a temperature rate sensor configured to monitor the temperature of a semiconductor device during a first state. The circuit is further configured to selectively switch the semiconductor device from the first state to a second state if the temperature increases at a rate that has a predetermined relationship with a temperature rate function. Other methods and systems are also disclosed.
Claims15
A circuit, comprising:
- a temperature rate sensor configured to monitor the temperature of a semiconductor device during a first state and selectively switch the semiconductor device from the first state to a second state if the temperature increases at a rate that has a predetermined relationship with a temperature rate function, the temperature rate sensor comprising:
- a temperature sensor configured to provide the temperature of the semiconductor device;
- a differentiator configured to provide a differentiated temperature by differentiating the temperature;
- and
- a comparator configured to compare the differentiated temperature to an adjustable reference level representative of the temperature rate function, and to provide a comparator output value therefrom;
- and
- a logic circuit that is coupled to an output node of the comparator, wherein the logic circuit utilizes the comparator output value to provide a logic control signal to switch the semiconductor device from the first state to the second state.
4 more elements
A circuit for protection from over-stress, comprising:
- a temperature rate sensor configured to monitor a temperature of a semiconductor device and selectively provide an output signal based on whether the temperature increases at a rate that has a predetermined relationship with a temperature rate function;
- an integrator configured to, based on the output signal, selectively integrate the temperature during an integration period;
- wherein the semiconductor device is turned off if the integrated temperature measured over the integration period has a predetermined relationship with an integrator reference level.
A method for protecting a semiconductor device from over-stress, comprising:
- monitoring the temperature of a semiconductor device during an on-state;
- comparing a temperature rate associated with the monitored temperature to a temperature rate function;
- selectively integrating the temperature of the semiconductor device over a time window, where the selective integration is based on the comparison of the temperature rate to the temperature rate function;
- and
- comparing the integrated temperature to an integrator reference level to facilitate switching the device from the on-state to an off-state.
2 more elements
A circuit for protection from over-stress, comprising:
- means for monitoring the temperature of a semiconductor device during an on-state and for comparing a temperature rate associated with the monitored temperature to a temperature rate function;
- and
- circuitry to facilitate switching the semiconductor device from a first state to a second state if the temperature rate favorably compares to the temperature rate function;
- integration means for integrating the temperature of the semiconductor device over a time window;
- and
- means for providing an enabling signal that is representative of the time window for which integration is carried out.
3 more elements
A circuit for protection from over-stress, comprising:
- a temperature rate sensor configured to monitor a temperature of a semiconductor device and integrate the temperature during an integration period, the temperature rate sensor comprising:
- a temperature sensor configured to provide the temperature of the semiconductor device;
- a differentiator configured to aid in designating the start of the integration period;
- and
- an integrator configured to integrate the temperature during the integration period;
- wherein the integration period relates to a time at which a rate of temperature increase has a pre-determined relationship with a temperature rate function.
3 more elements
A circuit for protection from over-stress, comprising:
- a temperature rate sensor configured to monitor a temperature of a semiconductor device and integrate the temperature during an integration period;
- wherein the integration period relates to a time at which a rate of temperature increase has a pre-determined relationship with a temperature rate function;
- and
- an inductor configured to generate flyback energy when turned from an on-state to an off-state by the semiconductor device;
- wherein the circuit is configured to provide a diagnostic fault flag if the flyback energy causes the rate of temperature increase to have the predetermined relationship with the temperature rate function.
2 more elements
Dependencies are inferred from the claim text.