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US 7,605,469 B2Granted
Atomic layer deposited tantalum containing adhesion layer
AssigneeIntel Corporation
InventorsSteven W. Johnston, Kerry Spurgin, Brennan L. Peterson
Life of this patent
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Abstract
Apparatus and methods of fabricating an atomic layer deposited tantalum containing adhesion layer within at least one dielectric material in the formation of a metal, wherein the atomic layer deposition tantalum containing adhesion layer is sufficiently thin to minimize contact resistance and maximize the total cross-sectional area of metal, including but not limited to tungsten, within the contact.
Claims6
An apparatus, comprising:
- a conductive material extending through at least one dielectric layer;
- and
- a tantalum containing adhesion layer between said conductive material and said at least one dielectric layer, wherein said tantalum containing adhesion layer comprises about 10% oxygen, about 25% carbon, with the remainder tantalum and nitrogen.
An apparatus formed by a method comprising:
- providing at least one dielectric layer;
- forming at least one opening extending through said at least one dielectric layer, wherein said opening is defined by at least one side;
- atomic layer depositing a tantalum containing adhesion layer on said at least one side, wherein said tantalum containing adhesion layer comprises about 10% oxygen, about 25% carbon, with the remainder tantalum and nitrogen;
- and
- depositing at least one conductive material to fill said opening and abut said tantalum containing adhesion layer.
2 more elements
An electronic system comprising:
- an external substrate within a housing;
- at least one microelectronic device package attached to said external substrate, having at least one contact including:
- a conductive material extending through at least one dielectric layer;
- and
- a tantalum containing adhesion layer between said conductive material and said at least one dielectric layer, wherein said tantalum containing adhesion layer comprises about 10% oxygen, about 25% carbon, with the remainder tantalum and nitrogen;
- an input device interfaced with said external substrate;
- and
- a display device interfaced with said external substrate.
5 more elements
An apparatus, comprising:
- a conductive material extending through at least one dielectric layer;
- and
- a tantalum containing adhesion layer between said conductive material and said at least one dielectric layer, said tantalum containing adhesion layer comprising about 10% oxygen, about 25% carbon, with the remainder tantalum and nitrogen, formed from a metal precursor containing tantalum and carbon reduced by silane in a carrier gas of nitrogen.
An apparatus formed by a method comprising:
- providing at least one dielectric layer;
- forming at least one opening extending through said at least one dielectric layer, wherein said opening is defined by at least one side;
- atomic layer depositing a tantalum containing adhesion layer on said at least one side with a metal precursor containing tantalum and carbon reduced by silane in a carrier gas of nitrogen, said tantalum containing adhesion layer comprising about 10% oxygen, about 25% carbon, with the remainder tantalum and nitrogen;
- and
- depositing at least one conductive material to fill said opening and abut said tantalum containing adhesion layer.
2 more elements
An electronic system comprising:
- an external substrate within a housing;
- at least one microelectronic device package attached to said external substrate, having at least one contact including:
- a conductive material extending through at least one dielectric layer;
- and
- a tantalum containing adhesion layer between said conductive material and said at least one dielectric layer, said tantalum containing adhesion layer comprising about 10% oxygen, about 25% carbon, with the remainder tantalum and nitrogen, formed from a metal precursor containing tantalum and carbon reduced by silane in a carrier gas of nitrogen;
- an input device interfaced with said external substrate;
- and
- a display device interfaced with said external substrate.
5 more elements
Dependencies are inferred from the claim text.